论文信息 - Implementation of real-time proximity effect correction in a raster shaped beam tool

Implementation of real-time proximity effect correction in a raster shaped beam tool

A method for real-time backscatter correction has been implemented in a 50 keV raster-scan electron-beam mask exposure system. The real-time nature of the correction makes it an attractive, user transparent feature with flexibility to choose the correction algorithm and scattering parameters. This article describes the correction algorithms and the hardware added to the data path. We compare simulated critical dimension (CD) linearity with results from mask exposures in our new raster shaped beam proof-of-concept tool. Performance meets both throughput and CD linearity requirements for the 130 and 100 nm device generations.

[1] J. Pavkovich,et al. Proximity effect correction calculations by the integral equation approximate solution method , 1986 .

[2] Frank E. Abboud,et al. System architecture choices for an advanced mask writer (100 to 130 nm) , 1999, Photomask Technology.

[3] Volker Boegli,et al. Raster shaped beam pattern generation , 1999 .

[4] Frank E. Abboud,et al. Address data reduction and lithography performance of graybeam writing strategies for raster scan mask generation , 1994 .

[5] P. Walsh,et al. Photolysis of Fe(CO)5 adsorbed on GaAs at 77 K , 1983 .

[6] Uli Hofmann,et al. Fundamental performance of state-of-the-art proximity effect correction methods , 1999 .

[7] Volker Boegli,et al. Run-time correction of proximity effects in raster scan pattern generator systems , 1999 .

[8] Mihir Parikh,et al. Energy deposition functions in electron resist films on substrates , 1979 .

[9] T. R. Groves,et al. Efficiency of electron‐beam proximity effect correction , 1993 .