论文信息 - Dynamic characteristics of MICC polycrystalline thin film transistors

Dynamic characteristics of MICC polycrystalline thin film transistors

Abstract We studied the DC bias-induced changes in the performance of the PMOS ring oscillator made of poly-Si TFT. The poly-Si was prepared by metal-induced crystallization of amorphous silicon through a cap layer (MICC). The p-channel MICC poly-Si TFT exhibited the field-effect mobility of 31 cm 2 /V s, on/off current ratio of ∼10 7 and threshold voltage of −2.8 V. A 41-stage PMOS inverter chain exhibited an operation frequency of 1.2 MHz at an applied voltage of V DD = −18 V. The degradation of the ring oscillator made of MICC poly-Si TFT is much less than that of ELA TFT by DC bias stress. The difference appears to be due to the smooth surface of MICC poly-Si as compared with a typical excimer laser annealing (ELA) poly-Si.

Jin Jang | Byung Seong Bae | Kyu-Chang Park | Yong-Duck Son | Kyung-Dong Yang

[1] Jean Brini,et al. Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistors , 1999 .

[2] Jin Jang,et al. 12.2: Large‐Area Poly‐Si on Glass by UV Scan Heating , 2002 .

[3] M. Sachdev,et al. An analytical equation for the oscillation frequency of high-frequency ring oscillators , 2004, IEEE Journal of Solid-State Circuits.

[4] Jin Jang,et al. Metal induced lateral crystallization of amorphous silicon through a silicon nitride cap layer , 2003 .

[5] Jin Jang,et al. Crystalline orientation of polycrystalline silicon with disklike grains produced by silicide-mediated crystallization of amorphous silicon , 2003 .

[6] J. Stoemenos,et al. Excimer laser annealing of amorphous and solid-phase-crystallized silicon films , 1999 .

[7] R. B. Iverson,et al. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters , 1987 .

[8] T. Chao,et al. Nitrogen Implantation and In Situ HF Vapor Clean for Deep Submicrometer n-MOSFETs , 2002 .