A systematic layout-based method for the modeling of high-power HBT's using the scaling approach

A systematic scaling approach for the modeling of high-power/large-size HBT's is presented. This approach is based on: 1) identifying and characterizing the elementary cell, and 2) modeling the input/output interconnections using the device's physical layout. The proposed approach reduces the optimization problem for the large-size device to the easier fitting of the lumped equivalent circuit of the elementary cell. It is shown that there is a good agreement between the predicted results, using the developed model, and the available measurements for different bias points. Such a modeling approach is particularly appealing for high-power applications where the large-signal characterization of large-size devices becomes a difficult task, particularly for on-wafer devices. >

[1]  Anand Gopinath,et al.  Parameter extraction technique for HBT equivalent circuit using cutoff mode measurement , 1992 .

[2]  James S. Harris,et al.  Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit , 1991 .

[3]  Fadhel M. Ghannouchi,et al.  A pseudo-three-dimensional finite element analysis of non-uniform multiconductor transmission lines , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[4]  Michael Y. Frankel,et al.  An analysis of the large-signal characteristics of AlGaAs/GaAs heterojunction bipolar transistors , 1992 .

[5]  J. P. Mondal,et al.  Propagation constant determination in microwave fixture de-embedding procedure , 1988 .

[6]  J. P. Mondal.  Distributed scaling approach of MESFETs and its comparison with the lumped-element approach , 1989 .

[7]  V. Tripathi.  Asymmetric Coupled Transmission Lines in an Inhomogeneous Medium , 1975 .

[8]  J.-P. Lanteri,et al.  A high power on-wafer pulsed active load pull system , 1992 .

[9]  M. B. Das.  High-frequency performance limitations of millimeter-wave heterojunction bipolar transistors , 1988 .

[10]  S. Lee,et al.  New circuit model for RF probe pads and interconnections for the extraction of HBT equivalent circuits , 1991, IEEE Electron Device Letters.

[11]  Fadhel M. Ghannouchi,et al.  On the use of S‐parameter measurements to model hbt intrinsic elements for large‐signal analysis purposes , 1993 .