Highly sensitive hot electron bolometer based on disordered graphene

A bolometer is a device that makes an electrical resistive response to the electromagnetic radiation resulted from a raise of temperature due to heating. The combination of the extremely weak electron-phonon interactions along with its small electron heat capacity makes graphene an ideal material for applications in ultra-fast and sensitive hot electron bolometer. However, a major issue is that the resistance of pristine graphene weakly depends on the electronic temperature. We propose using disordered graphene to obtain a strongly temperature dependent resistance. The measured electrical responsivity of the disordered graphene bolometer reaches 6 × 106 V/W at 1.5 K, corresponding to an optical responsivity of 1.6 × 105 V/W. The deduced electrical noise equivalent power is 1.2 , corresponding to the optical noise equivalent power of 44 . The minimal device structure and no requirement for high mobility graphene make a step forward towards the applications of graphene hot electron bolometers.

[1]  Jae-Young Choi,et al.  A Platform for Large‐Scale Graphene Electronics – CVD Growth of Single‐Layer Graphene on CVD‐Grown Hexagonal Boron Nitride , 2013, Advanced materials.

[2]  P. Hakonen,et al.  Self heating and nonlinear current-voltage characteristics in bilayer graphene , 2011, 1102.0658.

[3]  Andre K. Geim,et al.  Raman spectrum of graphene and graphene layers. , 2006, Physical review letters.

[4]  K. Jenkins,et al.  Operation of graphene transistors at gigahertz frequencies. , 2008, Nano letters.

[5]  D. Basko,et al.  Raman spectroscopy as a versatile tool for studying the properties of graphene. , 2013, Nature nanotechnology.

[6]  Takashi Taniguchi,et al.  Hot Carrier–Assisted Intrinsic Photoresponse in Graphene , 2011, Science.

[7]  T. Murphy,et al.  Photothermal response in dual-gated bilayer graphene. , 2013, Physical review letters.

[8]  包信和,et al.  Modulation-doped growth of mosaic graphene with single-crystalline p–n junctions for efficient photocurrent generation , 2012 .

[9]  P. Kim,et al.  Temperature-dependent transport in suspended graphene. , 2008, Physical review letters.

[10]  Carl W. Magnuson,et al.  Graphene films with large domain size by a two-step chemical vapor deposition process. , 2010, Nano letters (Print).

[11]  C. N. Lau,et al.  Graphene-based quantum Hall effect infrared photodetector operating at liquid Nitrogen temperatures , 2011 .

[12]  A. M. van der Zande,et al.  Photo-thermoelectric effect at a graphene interface junction. , 2009, Nano letters.

[13]  K. Schwab,et al.  Ultrasensitive and Wide-Bandwidth Thermal Measurements of Graphene at Low Temperatures , 2012, 1202.5737.

[14]  P. Hakonen,et al.  Shot noise and conductivity at high bias in bilayer graphene: Signatures of electron-optical phonon coupling , 2009, 0904.4446.

[15]  Kai Yan,et al.  Modulation-doped growth of mosaic graphene with single-crystalline p–n junctions for efficient photocurrent generation , 2012, Nature Communications.

[16]  D. Ralph,et al.  Photocurrent measurements of supercollision cooling in graphene , 2012, Nature Physics.

[17]  Xu Du,et al.  Bolometric response in graphene based superconducting tunnel junctions , 2011, 1110.5623.

[18]  David Olaya,et al.  Ultrasensitive hot-electron nanobolometers for terahertz astrophysics. , 2007, Nature nanotechnology.

[19]  D. Lynch,et al.  Handbook of Optical Constants of Solids , 1985 .

[20]  A. Neto,et al.  Making graphene visible , 2007, Applied Physics Letters.

[21]  Xu Du,et al.  Approaching ballistic transport in suspended graphene. , 2008, Nature nanotechnology.

[22]  Jing Kong,et al.  Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. , 2012, Nano letters.

[23]  S. Xiao,et al.  Intrinsic and extrinsic performance limits of graphene devices on SiO 2 , 2008 .

[24]  Ron Dagani,et al.  CARBON-BASED ELECTRONICS , 1999 .

[25]  G. Fève,et al.  Supercollision cooling in undoped graphene , 2012, Nature Physics.

[26]  Nevill Mott,et al.  Conduction in glasses containing transition metal ions , 1968 .

[27]  E. Schubert,et al.  Temperature dependence of the quantum efficiency in green light emitting diode dies , 2007 .

[28]  P. Klang,et al.  Microcavity-Integrated Graphene Photodetector , 2011, Nano letters.

[29]  Jun Yan,et al.  Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene. , 2014, Nature nanotechnology.

[30]  Kai Yan,et al.  Site‐Specific Transfer‐Printing of Individual Graphene Microscale Patterns to Arbitrary Surfaces , 2011, Advanced materials.

[31]  E. Hendry,et al.  Nonlinear resistivity and heat dissipation in monolayer graphene , 2012, 1202.3394.

[32]  S. Xiao,et al.  Intrinsic and extrinsic performance limits of graphene devices on SiO2. , 2007, Nature nanotechnology.

[33]  Howard Milchberg,et al.  Dual-gated bilayer graphene hot-electron bolometer. , 2012, Nature nanotechnology.

[34]  S. Sarma,et al.  Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene , 2007, 0711.0754.

[35]  K. Novoselov,et al.  Giant intrinsic carrier mobilities in graphene and its bilayer. , 2007, Physical review letters.

[36]  J. Viljas,et al.  Electron-phonon heat transfer in monolayer and bilayer graphene , 2010, 1002.3502.

[37]  I. Riess,et al.  A percolation treatment of high-field hopping transport , 1976 .

[38]  S. Kubakaddi.  Interaction of massless Dirac electrons with acoustic phonons in graphene at low temperatures , 2009 .

[39]  H. Temkin,et al.  Light‐current characteristics of InGaAsP light emitting diodes , 1981 .

[40]  Xu Du,et al.  Suspended Graphene: a bridge to the Dirac point , 2008, 0802.2933.

[41]  Aaron M. Jones,et al.  Ultrafast hot-carrier-dominated photocurrent in graphene. , 2012, Nature nanotechnology.

[42]  C. Dimitrakopoulos,et al.  100-GHz Transistors from Wafer-Scale Epitaxial Graphene , 2010, Science.

[43]  K. Jenkins,et al.  Operation of graphene transistors at gigahertz frequencies. , 2008, Nano letters.

[44]  P. Richards.  Bolometers for infrared and millimeter waves , 1994 .

[45]  A. Madouri,et al.  Hot electron cooling by acoustic phonons in graphene. , 2012, Physical review letters.

[46]  Sukosin Thongrattanasiri,et al.  Complete optical absorption in periodically patterned graphene. , 2012, Physical review letters.

[47]  L. Levitov,et al.  Disorder-assisted electron-phonon scattering and cooling pathways in graphene. , 2011, Physical review letters.