Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress

Experimental evidences are given which demonstrate that degradation of the common-emitter forward current gain h/sub FE/ of submicron silicon npn bipolar transistors at low reverse emitter-base junction applied voltage is caused by primary hot holes of the n/sup +//p emitter tunneling current rather than secondary hot electrons generated by the hot holes or thermally-generated hot electrons. Experiments also showed similar kinetic energy dependence of the generation rate of oxide/silicon interface traps by primary hot electrons and primary hot holes. Significant h/sub FE/ degradation was observed at stress voltages less than 2.4 V.

[1]  Chenming Hu,et al.  Hot-carrier degradation in bipolar transistors at 300 and 110 K-effect on BiCMOS inverter performance , 1990 .

[2]  I. C. Kizilyalli,et al.  Degradation of gain in bipolar transistors , 1994 .

[3]  Chih-Tang Sah,et al.  Current-acceleration for rapid time-to-failure determination of bipolar junction transistors under emitter-base reverse-bias stress , 1995 .

[4]  Hiroshi Iwai,et al.  Analysis of the temperature dependence of hot-carrier-induced degradation in bipolar transistors for Bi-CMOS , 1994 .

[5]  E. Hackbarth,et al.  On the very-high-current degradations on Si n-p-n transistors , 1990 .

[6]  A. Roy,et al.  Substrate injection induced program disturb-a new reliability consideration for flash-EPROM arrays , 1992, 30th Annual Proceedings Reliability Physics 1992.

[7]  Denny D. Tang,et al.  Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design , 1988 .

[8]  Gregory J. Sonek,et al.  Hot carrier induced bipolar transistor degradation due to base dopant compensation by hydrogen: theory and experiment , 1994 .

[9]  D. R. Collins.  ERRATA: Excess Current Generation due to Reverse Bias P-N Junction Stress , 1968 .

[10]  Timothy A. Grotjohn,et al.  Temperature dependence of hot-electron degradation in bipolar transistors , 1993 .

[11]  J. D. Burnett,et al.  Modeling hot-carrier effects in polysilicon emitter bipolar transistors , 1988 .

[12]  A. Neugroschel,et al.  Accelerated reverse emitter-base bias stress methodologies and time-to-failure application , 1996, IEEE Electron Device Letters.

[13]  S. Ramaswamy,et al.  An improved hydrodynamic transport model for silicon , 1993 .