Investigation of zinc incorporation in GaAs epilayers grown by low‐pressure metalorganic chemical‐vapor deposition

Low‐pressure metalorganic chemical‐vapor deposition was adopted to grow p‐type GaAs epilayers. Triethylgallium and arsine (AsH3) are used as Ga and As sources, respectively. Diethylzinc (DEZn) is used as a p‐type dopant. The hole‐carrier concentration and zinc incorporation efficiency are studied by Hall measurements and 16‐K photoluminescence spectral. The influence of growth parameters, such as the DEZn mole fraction, growth temperature, and AsH3 mole fraction, on the zinc incorporation and the epilayer growth rate are discussed. The hole‐carrier concentration increases with increasing DEZn and AsH3 mole fractions and decreases with increasing growth temperature. A vacancy control model can be adopted to explain the above results consistently. The growth rate of the epilayer is enhanced by zinc incorporation and decreases with increasing growth temperature. The decrease in growth rate is presumably due to the decrease in diethylzinc incorporation at higher growth temperatures.

[1]  H. Lüth,et al.  A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs , 1986 .

[2]  T. Makimōto,et al.  Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs , 1985 .

[3]  T. Kuech,et al.  Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures , 1985 .

[4]  L. Chen,et al.  Incorporation of Al and Ga in AlGaAs grown by low‐pressure triethyl gallium metalorganic vapor‐phase epitaxy , 1985 .

[5]  J. Black,et al.  Reduced pressure MOVPE growth and characterization of GaAs/GaAlAs heterostructures using a triethylgallium source , 1984 .

[6]  R. Glew.  Zinc Doping of MOCVD GaAs , 1984 .

[7]  R. Glew,et al.  GaAlAsGaAs p-n-p heterojunction bipolar transistors grown by MOCVD , 1984 .

[8]  H. Mori,et al.  Epitaxial Growth of High-Purity GaAs by Low-Pressure MOCVD , 1984 .

[9]  H. Mori,et al.  Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD , 1983 .

[10]  P. Frijlink,et al.  Modulation Doped GaAs–Ga1-xAlxAs Heterostructures Grown by Atmospheric Pressure MOVPE , 1983 .

[11]  M. K. Lee,et al.  Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source , 1981 .

[12]  J. V. Vechten,et al.  Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors , 1975 .

[13]  J. V. Vechten,et al.  Simple Theoretical Estimates of the Schottky Constants and Virtual‐Enthalpies of Single Vacancy Formation in Zinc‐Blende and Wurtzite Type Semiconductors , 1975 .