Charge carrier mobility in Bi2Te/sub 3-x/Sex(x<0.4) solid solution with excess of Te

Thermoelectric and galvanomagnetic properties of n-Bi/sub 2/Te/sub 3-x/Se/sub x/ (x<0.4) solid solutions with the carrier density /spl les/1.10/sup 18/ cm/sup -3/ are studied. Some peculiarities of the mobility temperature dependence with account of the effective scattering parameter r/sub ef/ are discussed.