Source follower noise limitations in CMOS active pixel sensors
暂无分享,去创建一个
Robert K. Henderson | Donald J. Baxter | Keith M. Findlater | Jerome M. Vaillant | Christine Augier | Didier Herault | Jed Hurwitz | Lindsay A. Grant | Jean-Marc Volle
[1] Pierre Magnan,et al. Analysis and reduction of signal readout circuitry temporal noise in CMOS image sensors for low-light levels , 2000 .
[2] Eddy Simoen,et al. Explaining the amplitude of RTS noise in submicrometer MOSFETs , 1992 .
[3] James R. Janesick,et al. Lux transfer: CMOS versus CCD , 2002, IS&T/SPIE Electronic Imaging.
[4] Tso-Ping Ma,et al. The impact of device scaling on the current fluctuations in MOSFET's , 1994 .
[5] J. Janesick,et al. Charge-Coupled-Device Charge-Collection Efficiency And The Photon-Transfer Technique , 1987 .
[6] Robert Henderson,et al. 12.4 SXGA Pinned Photodiode CMOS Image Sensor in 0.35µm Technology , 2003 .
[7] Abbas El Gamal,et al. Analysis of temporal noise in CMOS photodiode active pixel sensor , 2001, IEEE J. Solid State Circuits.
[8] Takahisa Ueno,et al. A CMOS image sensor with a simple FPN-reduction technology and a hole accumulated diode , 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).