Design for Manufacturing

Co-optimization between design and process is required for a highly manufacturable process technology. This paper discusses this co-optimization and how it meets the challenges for maintaining Moore’s Law while delivering new processes and designs capable of fast ramp to high yields. Poly is one of the most critical layers for control of variation, and it needs the most restrictive rules. We show the change in poly rules over the last few processes to illustrate how rules have changed to meet manufacturing requirements. The variation, density, and yields on the 45nm process show the success of this Design for Manufacturing (DFM) methodology.

[1]  Gordon E. Moore.  Lithography and the future of Moore's law , 1995, Advanced Lithography.

[2]  R. Chau,et al.  A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging , 2007, 2007 IEEE International Electron Devices Meeting.

[3]  Yan Borodovsky,et al.  Marching to the beat of Moore's Law , 2006, SPIE Advanced Lithography.

[4]  K.J. Kuhn,et al.  Reducing Variation in Advanced Logic Technologies: Approaches to Process and Design for Manufacturability of Nanoscale CMOS , 2007, 2007 IEEE International Electron Devices Meeting.

[5]  Alfred K. Wong,et al.  Microlithography: Trends, Challenges, Solutions, and Their Impact on Design , 2003, IEEE Micro.

[6]  Acknowledgments , 2006, Molecular and Cellular Endocrinology.

[7]  James Tschanz,et al.  Parameter variations and impact on circuits and microarchitecture , 2003, Proceedings 2003. Design Automation Conference (IEEE Cat. No.03CH37451).