Design trade-off relations for the last stage of a complementary metal-oxide-semiconductor (CMOS) off-chip driver that meets a prespecified normalized maximum simultaneous switching ground noise and a prespecified normalized time when the switched N-channel metal-oxide-semiconductor transistor (NMOST) leaves the saturation region are provided in this paper. To maintain system performance with control of 90-10% fall time and/or 10-90% rise time, the proposed trade-off relations are then modified numerically for design with prespecified fall/rise time. The proposed trade-offs relate the normalized simultaneous switching noise and the normalized switching time to driver size, load capacitance, ground/power path inductance, number of switching drivers, and input signal rise time. It will be shown that a dimensionless analysis method allows design to be extended to a variety of systems that share the same dimensionless performance. Such a feature will be demonstrated by SPICE simulations of circuits based upon the proposed design relations and MOS1 model, which agrees well with the design goals.
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