Single-layer MoS2 transistors.

Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

[1]  R. Frindt,et al.  Single Crystals of MoS2 Several Molecular Layers Thick , 1966 .

[2]  R. Fivaz,et al.  Mobility of Charge Carriers in Semiconducting Layer Structures , 1967 .

[3]  B. Parkinson,et al.  Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides , 1982 .

[4]  S. Morrison,et al.  Single-layer MoS2 , 1986 .

[5]  W. Richardson,et al.  A new three-terminal tunnel device , 1987, IEEE Electron Device Letters.

[6]  Norbert Kruse,et al.  Single-layer MoS2 on mica: studies by means of scanning force microscopy , 1993 .

[7]  R. Tenne,et al.  High-Rate, Gas-Phase Growth of MoS2 Nested Inorganic Fullerenes and Nanotubes , 1995, Science.

[8]  D. Mihailovic,et al.  Self-Assembly of Subnanometer-Diameter Single-Wall MoS2 Nanotubes , 2001, Science.

[9]  Xiangfeng Duan,et al.  High-performance thin-film transistors using semiconductor nanowires and nanoribbons , 2003, Nature.

[10]  C. Berger,et al.  Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. , 2004, cond-mat/0410240.

[11]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[12]  Andre K. Geim,et al.  Two-dimensional atomic crystals. , 2005, Proceedings of the National Academy of Sciences of the United States of America.

[13]  A. Geim,et al.  Two-dimensional gas of massless Dirac fermions in graphene , 2005, Nature.

[14]  P. Kim,et al.  Experimental observation of the quantum Hall effect and Berry's phase in graphene , 2005, Nature.

[15]  A. Balandin,et al.  Giant enhancement of the carrier mobility in silicon nanowires with diamond coating. , 2006, Nano letters.

[16]  Dmitri E. Nikonov,et al.  Analysis of graphene nanoribbons as a channel material for field-effect transistors , 2006 .

[17]  L. Gomez,et al.  Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nm , 2007, IEEE Electron Device Letters.

[18]  D. Jena,et al.  Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering. , 2007, Physical review letters.

[19]  Aachen,et al.  A Graphene Field-Effect Device , 2007, IEEE Electron Device Letters.

[20]  Jing Guo,et al.  Effect of edge roughness in graphene nanoribbon transistors , 2007, 0712.3928.

[21]  R. Chau,et al.  A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging , 2007, 2007 IEEE International Electron Devices Meeting.

[22]  K. Mistry,et al.  The High-k Solution , 2007, IEEE Spectrum.

[23]  P. Kim,et al.  Energy band-gap engineering of graphene nanoribbons. , 2007, Physical review letters.

[24]  F. Guinea,et al.  Coulomb blockade in graphene nanoribbons. , 2007, Physical review letters.

[25]  E. Williams,et al.  Atomic structure of graphene on SiO2. , 2007, Nano letters.

[26]  Michael S. Fuhrer,et al.  Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides , 2007 .

[27]  H. Dai,et al.  Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors , 2008, Science.

[28]  G. Fudenberg,et al.  Ultrahigh electron mobility in suspended graphene , 2008, 0802.2389.

[29]  Fabian Duerr,et al.  Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene , 2009, Nature.

[30]  H. Dai,et al.  Narrow graphene nanoribbons from carbon nanotubes , 2009, Nature.

[31]  T. Tang,et al.  Direct observation of a widely tunable bandgap in bilayer graphene , 2009, Nature.

[32]  Yuyuan Tian,et al.  Dielectric screening enhanced performance in graphene FET. , 2009, Nano letters.

[33]  J. Shan,et al.  Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.

[34]  Fengnian Xia,et al.  Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. , 2010, Nano letters.

[35]  A. Splendiani,et al.  Emerging photoluminescence in monolayer MoS2. , 2010, Nano letters.

[36]  Kang L. Wang,et al.  High-speed graphene transistors with a self-aligned nanowire gate , 2010, Nature.

[37]  F. Schwierz.  Graphene transistors. , 2010, Nature nanotechnology.

[38]  K. Shepard,et al.  Boron nitride substrates for high-quality graphene electronics. , 2010, Nature nanotechnology.

[39]  B. Radisavljevic,et al.  Visibility of dichalcogenide nanolayers , 2010, Nanotechnology.