MBE growth mode and C incorporation of GeC epilayers on Si(0 0 1) substrates using an arc plasma gun as a novel C source
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Masahiro Nunoshita | Jun Ohta | Takashi Tokuda | J. Ohta | T. Tokuda | M. Nunoshita | M. Okinaka | Motoki Okinaka | Yasumasa Hamana | Yasumasa Hamana
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