Parasitic inductance extraction and verification for 3D Planar Bond All Module

In this paper, the parasitic inductance extraction method is studied in detail. It is analyzed that the value of the lumped power loop inductance will be varying at different switching transients. With the aid of Ansys Q3D Extractor, different values of lumped power loop parasitic inductance are obtained at different time intervals during turn-off process for both upper and lower devices. A dedicated 3D Planar Bond All Module with access to both kelvin and terminal drain-to-source voltage is built, and the parasitic inductance of the module is experimentally extracted by comparing those two voltages in double pulse tests. The experiment result shows good agreement with the simulated parasitic inductance value thus validating the extraction and simulation method.

[1]  Fred C. Lee,et al.  Simulation model development and verification for high voltage GaN HEMT in cascode structure , 2013, 2013 IEEE Energy Conversion Congress and Exposition.

[2]  Leon M. Tolbert,et al.  Reduction of stray inductance in power electronic modules using basic switching cells , 2010, 2010 IEEE Energy Conversion Congress and Exposition.

[3]  Zhenxian Liang Integrated double sided cooling packaging of planar SiC power modules , 2015, 2015 IEEE Energy Conversion Congress and Exposition (ECCE).

[4]  John P. Ranieri,et al.  Plastic constraint of large aspect ratio solder joints , 1995 .

[5]  C. Basaran,et al.  Failure modes and FEM analysis of power electronic packaging , 2002 .

[6]  C. Paul Inductance: Loop and Partial , 2009 .

[7]  Dushan Boroyevich,et al.  Modeling and simulation of 2 kV 50 A SiC MOSFET/JBS power modules , 2009, 2009 13th European Conference on Power Electronics and Applications.

[8]  Leon M. Tolbert,et al.  Understanding the limitations and impact factors of wide bandgap devices' high switching-speed capability in a voltage source converter , 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

[9]  John A. Nelder,et al.  A Simplex Method for Function Minimization , 1965, Comput. J..

[10]  D.Y.R. Chong,et al.  Mechanical characterization in failure strength of silicon dice , 2004, The Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena In Electronic Systems (IEEE Cat. No.04CH37543).

[11]  Douglas C. Hopkins,et al.  Misconception of thermal spreading angle and misapplication to IGBT power modules , 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.

[12]  William D. Callister,et al.  Materials Science and Engineering: An Introduction , 1985 .

[13]  Leon M. Tolbert,et al.  Stray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module , 2014, IEEE Transactions on Power Electronics.

[14]  Dushan Boroyevich,et al.  Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics , 2010, The 2010 International Power Electronics Conference - ECCE ASIA -.

[15]  Dushan Boroyevich,et al.  A frequency-domain study on the effect of DC-link decoupling capacitors , 2013, 2013 IEEE Energy Conversion Congress and Exposition.