Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer

The temperature dependence of the electroluminescence (EL) spectral intensity has been investigated in detail between T=20 and 300K at various injection current levels for a set of two blue InGaN∕GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with and without an additional n-doped In0.18Ga0.82N electron reservoir layer (ERL). The radiative recombination efficiency of the main blue emission band (∼480nm) is found to be significantly improved at all temperature regions and current levels when the additional ERL is introduced. For high injection currents If, i.e., large forward bias voltages Vf, a quenching of the EL intensity is observed for T<100K for both LED structures, accompanying appearance of short-wavelength satellite emissions around 380–430nm. Furthermore, the low-temperature intensity reduction of the main EL band is stronger for the LED without the ERL than with the ERL. For low If, i.e., small Vf, however, no quenching of the EL intensity is observed for both LEDs even below 100K ...

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