Broadband and High Voltage Gain CMOS LNA For Integrated 6- 8.5GHz UWB Carrierless Impulse Radio Receivers

The design of fully integrated CMOS LNA for UWB carrierless impulse radio receivers is presented. An original LC input matching cell architecture enable s percentage bandwidths of about 25% that match the new ECC 6-8.5-GHz UWB frequency band . A design method allowing low noise figure and high voltage gain is presented. Measurements results on a LNA prototype fabricated in a 0.13 µm standard CMOS process show average voltage gain and noise figure of 29.5dB and 4.5 dB respectively.

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