论文信息 - Epitaxial n-channel JFETs integrated on high resistivity silicon for X-ray detectors

Epitaxial n-channel JFETs integrated on high resistivity silicon for X-ray detectors

Junction field-effect transistors (JFETs) were fabricated directly onto a high resistivity silicon wafer and tested as readout devices for radiation detectors. The JFETs were fabricated using an n-channel epitaxial process. We report on the design and electrical characteristics of these devices as well as the noise performance and energy resolution obtained with these devices when operated as X-ray spectrometers. >

F. Olschner | Paul R. Bennett | J. C. Lund | L. Rehn

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