Residual stress measurement in thin films using a slitting method with geometric phase analysis under a dual beam (FIB/SEM) system

Stress generated during thin film deposition is a critical issue for many applications. In general, the possible origins of the residual stress include intrinsic and extrinsic stresses. Since high residual stresses can cause detrimental effects on the film, such as delamination and wrinkle, it is of great importance to quantify the residual stress for the optimal design and the evaluation of its mechanical behavior. In this study, a method combining focused ion beam (FIB) milling and geometric phase analysis (GPA) is developed to assess the residual stress of thin films. The procedures of the residual stress measurement using this method include grating fabrication and slot milling by FIB, high-resolution scanning electron microscope (SEM) imaging of the grating before and after stress relaxation, and deformation analysis by GPA. The residual stress can be inferred from the released deformation using the reference displacements of the finite element model. As an application, this method was utilized to measure the residual stress in a TiAlSiN film, and the measured result is in good agreement with that obtained by the curvature method. In order to analyze the measurement error, the influence factors of Ga+ bombardment and the deposited platinum layer on the stress calculation are also discussed in detail.

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