论文信息 - V-band planar Gunn oscillators and VCOs on AlN substrates using flip-chip bonding technology

V-band planar Gunn oscillators and VCOs on AlN substrates using flip-chip bonding technology

This paper presents the development of V-band planar Gunn oscillators using novel flip-chip GaAs Gunn diodes mounted on aluminum nitride (AlN) substrates. Due to using flip-chip bonding technology and unpackaged Gunn diodes, the Gunn oscillator can be expected to realize low-cost mass production. The Gunn oscillator generates an output power of 63.1 mW at 58.73 GHz with 2.57% conversion efficiency. An excellent phase noise of-87.67 dBc/Hz at 100 kHz off carrier has been achieved. A varactor tunable Gunn VCO with a tuning range of 450 MHz at a center frequency of 60.14 GHz is also demonstrated.

K. Watanabe | A. Nakagawa | T. Deguchi

[1] Mehran Matloubian,et al. A low-cost W-band MIC mixer using flip-chip technology , 1997 .

[2] K. Nagai,et al. 60 GHz flip-chip assembled MIC design considering chip-substrate effect , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[3] M. Sagawa,et al. A millimeter-wave flip-chip IC using micro-bump bonding technology , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.