论文信息 - Characterization method for ionizing radiation degradation in power MOSFETs

Characterization method for ionizing radiation degradation in power MOSFETs

An innovative method for power MOSFET's characterization is presented. The radiation-induced degradation of structural parameters in the body-drain junction is shown to be related to the total dose. These results provide a new way, through these new parameters, to qualify the radiation response of power MOSFETs.

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