Topology of covalent non-crystalline solids II: Medium-range order in chalcogenide alloys and ASi(Ge)

Abstract Characteristic order over distances of 15–30 A is indicated by various experiments on covalent non-crystalline solids. The data are reviewed and detailed structural models are developed containing 30–1000 atoms.

[1]  R. Zallen,et al.  Rigid-layer modes in chalcogenide crystals , 1974 .

[2]  J. Bornarel Existence of Dislocations at Domain Tips in Ferroelectric Crystal KH2PO4 , 1972 .

[3]  G. P. McCarthy,et al.  Surface Processes in the Growth of Silicon on (111) Silicon in Ultrahigh Vacuum , 1968 .

[4]  T. Coutts Percolation conduction in mixed insulator-conductor systems , 1976 .

[5]  J. C. Phillips,et al.  Topology of covalent non-crystalline solids I: Short-range order in chalcogenide alloys , 1979 .

[6]  A. Feltz,et al.  Über Glasbildung und Eigenschaften von Chalkogenidsystemen. XVI. Bleiselenogermanat-Gläser und ihre Eigenschaften , 1978 .

[7]  H. Schäfer,et al.  Die Kristallstruktur von Germaniumdiselenid , 1976 .

[8]  A. Wright,et al.  A comparison of the structures of vapour-deposited and bulk arsenic sulphide glasses , 1977 .

[9]  F. L. Galeener Submicroscopic-Void Resonance: The Effect of Internal Roughness on Optical Absorption , 1971 .

[10]  R. Temkin,et al.  Amorphous germanium II. Structural properties , 1973 .

[11]  J. Nishizawa,et al.  Defect-free nucleation of silicon on {111} silicon surfaces , 1974 .

[12]  J. Chelikowsky,et al.  Electronic states on the relaxed (110) surface of GaAs , 1979 .

[13]  J. Joannopoulos,et al.  'Cluster-Bethe-lattice' method: electronic density of states of amorphous and crystalline homopolar solids , 1974 .

[14]  Y. Inuishi,et al.  Raman and Infrared Studies on Vibrational Properties of Ge–Se Glasses , 1977 .

[15]  H. Leamy,et al.  Columnar microstructure in vapor-deposited thin films , 1977 .

[16]  M. Hoare Packing models and structural specificity , 1978 .

[17]  T. Ninomiya Theory of Melting, Dislocation Model. I , 1978 .

[18]  M. Fixman Simulation of polymer dynamics. II. Relaxation rates and dynamic viscosity , 1978 .

[19]  G. Velasco,et al.  Hydrogenation of evaporated amorphous silicon films by plasma treatment , 1978 .

[20]  C. Angell,et al.  THERMODYNAMICS OF THE GLASS TRANSITION: EMPIRICAL ASPECTS * , 1976 .

[21]  David Beeman,et al.  Vibrational properties of elemental amorphous semiconductors , 1977 .

[22]  D. Chadi,et al.  Atomic and Electronic Structures of Reconstructed Si(100) Surfaces , 1979 .

[23]  R. Street,et al.  Thermally induced effects in evaporated chalcogenide films. I. Structure , 1978 .

[24]  K. Tai,et al.  Electron diffraction studies of Ag photodoping in GexSe1−x glass films , 1980 .

[25]  W. Kauzmann The Nature of the Glassy State and the Behavior of Liquids at Low Temperatures. , 1948 .

[26]  A. Miller Excess Thermodynamic Quantities in Linear Polymer Liquids. , 1970 .

[27]  F. Abraham,et al.  Empirical Criterion for the Glass Transition Region Based on Monte Carlo Simulations , 1978 .

[28]  J. C. Phillips,et al.  Macroscopic Model of Formation of Vacancies in Semiconductors , 1973 .

[29]  J. Phillips Structural Principles of α ‐ AgI and Related Double Salts , 1976 .

[30]  P. Leath Cluster size and boundary distribution near percolation threshold , 1976 .

[31]  J. Poate,et al.  Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurements , 1980 .

[32]  J. J. Hauser Electrical Properties and Anisotropy in Amorphous Si and Si 0.5 Ge 0.5 Alloy , 1973 .

[33]  G. Destefanis,et al.  Very efficient void formation in ion implanted InSb , 1980 .

[34]  R. Davies,et al.  Thermodynamic and kinetic properties of glasses , 1953 .

[35]  Masakuni Suzuki,et al.  Acousto-induced structural change in amorphous As2S3 , 1978 .

[36]  Yoshihiko Mizushima,et al.  A new inorganic electron resist of high contrast , 1977 .

[37]  J. Knights (Invited) Characterization of Plasma-Deposited Amorphous Si: H Thin Films , 1979 .

[38]  J. C. Phillips Precursor phenomena in unstable lattices , 1977 .

[39]  T. N. Claytor,et al.  Excess Ultrasonic Attenuation in As 2 S 3 Glass after Electric Field Removal , 1979 .

[40]  G. Lucovsky,et al.  Defects in plasma-deposited a-Si: H , 1979 .

[41]  P. C. Taylor,et al.  Temperature and frequency dependences of the far-infrared and microwave optical absorption in amorphous materials , 1977 .

[42]  H. Stein Vacancies and the Chemical Trapping of Hydrogen in Silicon , 1979 .

[43]  G. Grest,et al.  Origin of Low-Temperature Tunneling States in Glasses , 1980 .

[44]  G. Lucovsky,et al.  First evidence for vibrational excitations of large atomic clusters in amorphous semiconductors , 1977 .

[45]  B. Averbach,et al.  Atomic Radial Distribution Functions of As-Se Glasses , 1973 .

[46]  M. B. Myers,et al.  Structural characterizations of vitreous inorganic polymers by thermal studies , 1967 .

[47]  Bhanwar Singh,et al.  Photocontraction effect in amorphous Se 1-x Ge x films , 1979 .

[48]  T. Satow,et al.  The structure of liquid As2Se3 and GeSe2 by neutron diffraction , 1978 .

[49]  R. Street,et al.  Ionicity effects on defects in chalcogenide alloys , 1979 .

[50]  Michael Thorpe,et al.  Phonons in AX2 glasses: From molecular to band-like modes , 1977 .

[51]  Bhanwar Singh,et al.  Giant photocontraction effect in amorphous chalogenide thin films , 1980 .

[52]  D. Dove,et al.  Electron diffraction RDF analysis of amorphous As2Se3,AAs2Se2Te, As2SeTe2 and As2Te3 films , 1974 .

[53]  W. L. Haworth,et al.  Studies of amorphous GeSeTe alloys (I): Preparation and calorimetric observations , 1976 .

[54]  R. Azoulay,et al.  Devitrification characteristics of GexSe1−x glasses , 1975 .

[55]  J. C. Phillips,et al.  Molecular structure ofAs2Se3glassglass , 1980 .

[56]  J. Knights,et al.  Growth morphology and defects in plasma-deposited a-Si:H films , 1980 .

[57]  Robert Nemanich,et al.  Low-frequency inelastic light scattering from chalcogenide glasses and alloys , 1977 .

[58]  A. Wright,et al.  Diffraction studies of glass structure. I. Theory and quasi-crystalline model , 1972 .

[59]  B. V. Shanabrook,et al.  Raman scattering and infrared absorption in bulk amorphous red phosphorous , 1978 .

[60]  L. Turban Anisotropic percolation on the Bethe lattice , 1979 .

[61]  J. C. Phillips Bonds and Bands in Semiconductors , 1970, Science.

[62]  M. Fixman,et al.  Simulation of polymer dynamics. I. General theory , 1978 .

[63]  H. Schäfer,et al.  Die Kristallstruktur von L.T.-GeS2 , 1976 .

[64]  C. T. Moynihan,et al.  Heat Capacity and Structural Relaxation of Enthalpy in As2Se3 Glass , 1977 .

[65]  David Turnbull,et al.  Molecular Transport in Liquids and Glasses , 1959 .

[66]  J. E. Griffiths,et al.  Microscopic origin of the companionA1Raman line in glassy Ge(S,Se)2 , 1979 .

[67]  T. Satow,et al.  The neutron diffraction study of liquid GeTe and As2Te3 , 1979 .

[68]  J. C. Phillips The microdomain hypothesis and dual phases in solid electrolytes , 1977 .

[69]  M. Brodsky,et al.  Electron spin resonance of ultrahigh vacuum evaporated amorphous silicon: In situ and ex situ studies , 1978 .

[70]  R. Stephens Low-Temperature Specific Heat and Thermal Conductivity of Noncrystalline Dielectric Solids , 1973 .

[71]  C. Sébenne,et al.  Optical-Absorption Edge and Raman Scattering in Ge x Se 1 − x Glasses , 1973 .

[72]  D. Adler Density of States in the Gap of Tetrahedrally Bonded Amorphous Semiconductors , 1978 .

[73]  A. Ward,et al.  Lattice Vibrations and Interlayer Interactions in CrystallineAs2S3andAs2Se3 , 1971 .

[74]  J. Lannin Raman scattering in amorphous boron , 1978 .

[75]  H. Stein,et al.  Controlled hydrogenation of amorphous silicon at low temperatures , 1979 .

[76]  T. Ninomiya Theory of Melting, Dislocation Model. II , 1978 .

[77]  J. Chelikowsky,et al.  Self-consistent pseudopotential calculation for the relaxed (110) surface of GaAs , 1979 .

[78]  G. Lucovsky,et al.  Structural models for amorphous semiconductors and insulators , 1978 .

[79]  J. M. Chamberlain,et al.  Infrared structural studies of GeySe1−y glasses , 1978 .