论文信息 - Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. In0.5Ga0.5As quantum dots embedded in an In0.15Ga0.85As∕GaAs quantum well (QW) or a GaAs∕Al0.2Ga0.8As QW have been incorporated into photodetectors and were characterized. A spectral response in the 3–5μm atmospheric window has been achieved by adopting the GaAs∕Al0.2Ga0.8As QW.

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