论文信息 - Super low-noise GaAs MESFET's with a deep-recess structure

Super low-noise GaAs MESFET's with a deep-recess structure

Super low-noise GaAs MESFET's for replacement of parametric amplifiers have been successfully developed by adopting a deep-recess structure. The structure of a 0.5-µm gate in a deeply recessed region with a cylindrical edge shape has enabled reduction of the source resistance to a half of that of conventional flat-type MESFET's. The noise figure was improved by more than 0.5 dB by this reduction of the source resistance, and less than 2.0-dB noise figure has been reproducibly obtained at 12 GHz. The best noise figures were 0.7 dB (14.9-dB gain) at 4 GHz and 1.68 dB (10.7-dB gain) at 12 GHz. The developed MESFET's were applied to two-stage amplifiers of 11.7-12.2-GHz band, and the noise figure obtained was 2.16 dB (T_{e}: 185K) at room temperature and 1.94 dB (T_{e}: 163K) at 0°C. This performance is good enough to replace some of parametic amplifiers.

[1] H. Fukui. Optimal noise figure of microwave GaAs MESFET's , 1979, IEEE Transactions on Electron Devices.

[2] C. F. Krumm,et al. Noise performance of gallium arsenide field-effect transistors , 1976 .

[3] H. H. Berger,et al. Contact Resistance and Contact Resistivity , 1972 .

[4] W. R. Wisseman,et al. GaAs Power MESFET's: Design, Fabrication, and Performance , 1979 .

[5] N. Kawamura,et al. Submicron Single-Gate and Dual-Gate GaAs MESFET's with Improved Low Noise and High Gain Performance , 1976 .

[6] R.W.H. Engelmann,et al. Gunn domain formation in the saturated current region of GaAs MESFETs , 1976, 1976 International Electron Devices Meeting.

[7] B. T. Hughes,et al. A Low Noise FET Amplifier in Coplanar Waveguide , 1977, 1977 IEEE MTT-S International Microwave Symposium Digest.

[8] T. Furutsuka,et al. Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure , 1978, IEEE Transactions on Electron Devices.