Hydrogen-induced transient effect in carbon-doped InGaP hetero-junction bipolar transistors

Abstract The transient effect on the current gain of InGaP hetero-junction bipolar transistors was studied. It was found that this transient effect was caused by hydrogen and eliminated after three or more cycles of thermal annealing at 250 °C in nitrogen. A model based on the carbon–hydrogen complex dissociation by thermal anneal is proposed to explain this observation.

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