论文信息 - A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure

A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure

A one-transistor one-capacitor (1T1C) SBT-based embedded nonvolatile FeRAM, which operates at a low voltage of 0.9 V even after 10 years of imprint degradation, was fabricated using a 0.18-/spl mu/m process. The low voltage operation and high reliability characteristics have been achieved using a novel reference voltage scheme and a multilayer shielded bit-line structure.

[1] Kang-Deog Suh,et al. A 3.3-V 4-Mb nonvolatile ferroelectric RAM with a selectively-driven double-pulsed plate read/write-back scheme , 1999 .

[2] T. Otsuki,et al. A 0.9 V embedded ferroelectric memory for microcontrollers , 1995, Proceedings ISSCC '95 - International Solid-State Circuits Conference.

[3] Toshiyuki Honda,et al. 2-V/100-ns 1T/1C nonvolatile ferroelectric memory architecture with bitline-driven read scheme and nonrelaxation reference cell , 1997 .

[4] Hiroki Koike,et al. A self-reference read scheme for a 1T/1C FeRAM , 1998, 1998 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.98CH36215).