A New Approach To Broad-band Matching for P-i-n Photodiodes
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Microwave transmission-line theory has been applied to calculate p-i-n photodiode systems in which the carrier transit time, the geometric configuration, and the transmission-line characteristics were considered. The thickness of the intrinsic layer has been optimized to obtain a wide 3-dB bandwidth and a maximum gain-bandwidth product. A simulated result of 40-GHz bandwidth has been obtained for a device with a 20 x 20 mum2 p-i-n area. (C) 1995 John Wiley & Sons, Inc.
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