HYDROGEN IN SEMICONDUCTORS
暂无分享,去创建一个
[1] Chris G. Van de Walle,et al. Universal alignment of hydrogen levels in semiconductors, insulators and solutions , 2003, Nature.
[2] Yu.V. Gorelkinskii,et al. Electron paramagnetic resonance of hydrogen in silicon , 1991 .
[3] E. Mollwo. Die Wirkung von Wasserstoff auf die Leitfähigkeit und Lumineszenz von Zinkoxydkristallen , 1954 .
[4] Andersen,et al. Lattice location of deuterium interacting with the boron acceptor in silicon. , 1988, Physical review letters.
[5] Peter L. Walters,et al. Key to understanding interstitial H2 in Si. , 2002, Physical review letters.
[6] D. Carlson,et al. Direct role of hydrogen in the Staebler-Wronski effect in hydrogenated amorphous silicon. , 2002, Physical review letters.
[7] A. Wickenden,et al. Composition and structure of the GaN{0001¯}-(1×1) surface , 1996 .
[8] C. Walle,et al. Identification of hydrogen configurations in p-type GaN through first-principles calculations of vibrational frequencies , 2003 .
[9] H. Wagner,et al. Determination of the hydrogen diffusion coefficient in hydrogenated amorphous silicon from hydrogen effusion experiments , 1982 .
[10] Michael J. Callahan,et al. Infrared absorption from OH− ions adjacent to lithium acceptors in hydrothermally grown ZnO , 2004 .
[11] Quantum Distributions of Muonium and Hydrogen in Crystalline Silicon , 1998 .
[12] William R. Wampler,et al. Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment , 2001 .
[13] S. Estreicher. Hydrogen-related defects in crystalline semiconductors: a theorist's perspective , 1995 .
[14] Pantelides,et al. Theory of hydrogen diffusion and reactions in crystalline silicon. , 1989, Physical review letters.
[15] Matthew D. McCluskey,et al. Local vibrational modes of impurities in semiconductors , 2000 .
[16] Pantelides,et al. First-principles calculations of diffusion coefficients: Hydrogen in silicon. , 1990, Physical review letters.
[17] C. Walle,et al. Microscopic theory of hydrogen in silicon devices , 2000 .
[18] Weber,et al. Dissociation energies of shallow-acceptor-hydrogen pairs in silicon. , 1989, Physical review. B, Condensed matter.
[19] Johnson,et al. Inverted order of acceptor and donor levels of monatomic hydrogen in silicon. , 1994, Physical review letters.
[20] Wagner,et al. Isolated Hydrogen Molecules in GaAs. , 1996, Physical review letters.
[21] Jörg Neugebauer,et al. Structure of GaN(0001): The laterally contracted Ga bilayer model , 2000 .
[22] Martin,et al. Theoretical study of band offsets at semiconductor interfaces. , 1987, Physical review. B, Condensed matter.
[23] E. Haller,et al. Acceptor complexes in germanium: Systems with tunneling hydrogen , 1980 .
[24] Johnson,et al. Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon. , 1986, Physical review letters.
[25] Takashi Mukai,et al. Hole Compensation Mechanism of P-Type GaN Films , 1992 .
[26] J. Weber,et al. Raman Spectroscopy of Hydrogen Molecules in Crystalline Silicon , 1998 .
[27] W. Mönch,et al. Vibrational and electronic excitations at GaN{0001} surfaces , 2000 .
[28] Kahn,et al. Trigonal hydrogen-related acceptor complexes in germanium. , 1987, Physical review. B, Condensed matter.
[29] P. Cohen,et al. A rate equation model for the growth of GaN on GaN(0001̄) by molecular beam epitaxy , 2000 .
[30] R. Pritchard,et al. Interactions of hydrogen molecules with bond-centered interstitial oxygen and another defect center in silicon , 1997 .
[31] C. Walle,et al. Shallow donor state of hydrogen in indium nitride , 2003 .
[32] A. Wickenden,et al. Desorption of hydrogen from GaN(0001) observed by HREELS and ELS , 1999 .
[33] Chang,et al. Diatomic-hydrogen-complex diffusion and self-trapping in crystalline silicon. , 1989, Physical review letters.
[34] C. Walle,et al. Stability, diffusivity, and vibrational properties of monatomic and molecular hydrogen in wurtzite GaN , 2003 .
[35] V. Walle,et al. Hydrogen as a cause of doping in zinc oxide , 2000 .
[36] Jörg Neugebauer,et al. Role of hydrogen in doping of GaN , 1996 .
[37] S. Gates,et al. Hydrogen desorption and ammonia adsorption on polycrystalline GaN surfaces , 1995 .
[38] Theory of hydrogen in GaN , 1999 .
[39] J. Sun,et al. Deactivation of the boron acceptor in silicon by hydrogen , 1983 .
[40] C. Walle,et al. First-principles surface phase diagram for hydrogen on GaN surfaces. , 2002, Physical review letters.
[41] Pantelides. Defects in amorphous silicon: A new perspective. , 1986, Physical review letters.
[42] P. Briddon,et al. Hydrogen in diamond , 1988 .
[43] E. Haller,et al. Hydrogen interactions with defects in crystalline solids , 1992 .
[44] Buda,et al. Proton diffusion in crystalline silicon. , 1989, Physical Review Letters.
[45] S. Estreicher,et al. RADIATION-INDUCED FORMATION OF H*2 IN SILICON , 1999 .
[46] M. Stutzmann,et al. Lattice relaxation due to hydrogen passivation in boron‐doped silicon , 1988 .
[47] N. Giles,et al. The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy , 1996 .
[48] Stavola,et al. Hydrogen motion in defect complexes: Reorientation kinetics of the B-H complex in silicon. , 1988, Physical review letters.
[49] Van de Walle CG,et al. First-principles calculations of hyperfine parameters. , 1993, Physical review. B, Condensed matter.
[50] C. Walle,et al. First-principles calculations for defects and impurities: Applications to III-nitrides , 2004 .
[51] Zhang,et al. Diatomic-hydrogen-complex dissociation: A microscopic model for metastable defect generation in Si. , 1990, Physical review letters.
[52] Andreoni,et al. First-principles calculations of self-diffusion constants in silicon. , 1993, Physical review letters.
[53] Luke,et al. 29Si hyperfine structure of anomalous muonium in silicon: Proof of the bond-centered model. , 1988, Physical review letters.
[54] C. Walle. ENERGETICS AND VIBRATIONAL FREQUENCIES OF INTERSTITIAL H2 MOLECULES IN SEMICONDUCTORS , 1998 .
[55] T. Frauenheim,et al. Theory of Ga, N and H terminated GaN (0 0 0 1) (0 0 0 1) surfaces , 1998 .
[56] J. Pankove,et al. Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen , 1983 .
[57] S. Denbaars,et al. Surface Structure of GaN(0001) in the Chemical Vapor Deposition Environment , 1999 .
[58] M. Nardelli,et al. THEORY OF SURFACE MORPHOLOGY OF WURTZITE GAN (0001) SURFACES , 1997 .
[59] Michael O'Keeffe,et al. Hydrogen Storage in Microporous Metal-Organic Frameworks , 2003, Science.
[60] Jones,et al. H2* defect in crystalline silicon. , 1993, Physical review letters.
[61] Van de Walle CG,et al. Hydrogen interactions with self-interstitials in silicon. , 1995, Physical review. B, Condensed matter.
[62] Chang,et al. Hydrogen bonding and diffusion in crystalline silicon. , 1989, Physical review. B, Condensed matter.
[63] R. Felice,et al. Energetics of H and NH_2 on GaN(1010) and implications for the origin of nanopipe defects , 1997 .
[64] J. Fritsch,et al. Ab initio calculation of the stoichiometry and structure of the (0001) surfaces of GaN and AlN , 1998 .