论文信息 - Low threshold, large To injection laser emission from (InGa)As quantum dots

Low threshold, large To injection laser emission from (InGa)As quantum dots

Low threshold, large T/sub o/ injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated. The dots are formed due to a morphological transformation of a pseudomorphic In/sub 0.5/Ga/sub 0.5/As layer. Laser diodes are fabricated with a shallow mesa stripe geometry.< >

[1] Egorov,et al. Ultranarrow Luminescence Lines from Single Quantum Dots. , 1995, Physical review letters.

[2] Max G. Lagally,et al. KINETIC PATHWAY IN STRANSKI-KRASTANOV GROWTH OF Ge ON Si(001) , 1990 .

[3] Tersoff,et al. Shape transition in growth of strained islands: Spontaneous formation of quantum wires. , 1993, Physical review letters.

[4] R. Bechmann,et al. Numerical data and functional relationships in science and technology , 1969 .

[5] N. N. Ledentsov,et al. Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high‐index surfaces , 1994 .

[6] S. Denbaars,et al. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces , 1993 .

[7] H. Sakaki,et al. Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .

[8] E. Kasper. Strained Layer Superlattices , 1987 .