论文信息 - Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature - 字舞流文

Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature

J. Zhang | G. He | J. Gao | Rui Ma | M. Liu | Z. Q. Sun | P. Jin | D. Xiao | Hong Chen | Xi-Bao Chen | Z. Sun