Theory of metal-oxide-semiconductor solar cells

Abstract Theoretical calculations are presented for a metal-oxide-semiconductor solar cell by considering various physical processes involved in the transport of the carriers across the oxide layer and their recombination at the surface states. Results obtained here are quite general and incorporate various possibilities considered by earlier workers. Physical conditions under which the results of earlier theories would be consistent with the present one are pointed out. Numerical results are given for a typical n-type silicon base MOS solar cell.

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