论文信息 - Extended infrared response of InAsSb strained‐layer superlattices

Extended infrared response of InAsSb strained‐layer superlattices

Strained‐layer superlattices of InAsSb were grown with low densities of dislocations and microcracks for optical characterization to determine the suitability of these structures for infrared photodetectors. Infrared transmission measurements revealed absorption throughout the 8–12 μm region and extended to longer wavelengths than predicted from consideration of the tensile strain‐induced band‐gap shift in a type‐I superlattice. We conclude that a type‐II superlattice occurs in the InAsSb system for alloy compositions >60% Sb.

[1] Kwong-Kit Choi,et al. Molecular beam epitaxial growth and optical properties of InAs1−xSbx in 8–12 μm wavelength range , 1987 .

[2] R. M. Biefeld. The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor deposition , 1986 .

[3] G. Bastard,et al. Superlattice band structure in the envelope-function approximation , 1981 .

[4] Miller,et al. Band nonparabolicity effects in semiconductor quantum wells. , 1987, Physical review. B, Condensed matter.

[5] G. C. Osbourn,et al. InAsSb strained‐layer superlattices for long wavelength detector applications , 1984 .

[6] R. M. Biefeld. The preparation of InAs1−xSbx alloys and strained-layer superlattices by MOCVD , 1986 .

[7] G. Pitt. Developments in High Pressure Physics , 1977 .