论文信息 - Photo-Assisted Wet-Etched III–V Heterostructure Laser Mirrors

Photo-Assisted Wet-Etched III–V Heterostructure Laser Mirrors

We demonstrate the first photo-assisted wet-etched flat-surface mirrors in III-V laser heterostructure having an average reflectance of 0.87 of the ideal cleaved facet reflectance R c independent of crystal orientation. The largest observed reflectance was 0.93R c. These lasers were fabricated using a 532-nm laser source, sulfuric acid, and exposed-metal mask. The lateral waveguiding formed from air-semiconductor interfaces produced an average internal loss of 28/cm (smallest of 14/cm) compared with similar cleaved-mirror dark-etched lasers having 46/cm.

M. Parker | E. Yi | M.A. Parker | E.-H. Yi

[1] B. Miller,et al. GaInAsP/InP DH lasers with a chemically etched facet , 1980 .

[2] A. M. Sergent,et al. GaAs integrated optical circuits by wet chemical etching , 1979 .

[3] Larry A. Coldren,et al. Etched mirror and groove-coupled GaInAsP/InP laser devices for integrated optics , 1982 .

[4] L. Coldren,et al. Etched Mirror and Groove-Coupled GalnAsP/lnP Laser Devices for Integrated Optics , 1982 .

[5] InGaAsP/InP buried‐heterostructure lasers (λ = 1.5 μm) with chemically etched mirrors , 1981 .

[6] M. Parker,et al. Fabricating Vertical Sidewalls in GaAs ∕ AlGaAs Heterostructure Using Light-Induced Wet Etching , 2006 .

[7] L. Coldren,et al. Diode Lasers and Photonic Integrated Circuits , 1995 .

[8] P. Tien. Light waves in thin films and integrated optics. , 1971, Applied optics.

[9] M. Parker,et al. Control of Sidewall Angles Using UV LEDs during Wet Etching of GaAs , 2004 .

[10] J. Oudar,et al. Optical losses in plasma-etched AlGaAs microresonators using reflection spectroscopy , 1999 .

[11] T. Kuroda,et al. AlGaAs/GaAs Buried Multiquantum Well Lasers with a Reactive Ion Etched Window Facet , 1985 .

[12] R. Osgood,et al. Deep‐ultraviolet induced wet etching of GaAs , 1984 .

[13] C. M. Wolfe,et al. Integrated GaAs‐AlGaAs double‐heterostructure lasers , 1975 .