Flexoelectric effect in ceramic lead zirconate titanate

Mechanical strain gradient generated electric polarization or flexoelectric effect was investigated in unpoled lead zirconate titanate (PZT) ceramics in the ferroelectric state by using a cantilevered beam based approach. Flexoelectric coefficient μ12 at room temperature was measured to be 1.4μC∕m in the PZT ceramic at small level of strain gradient. Temperature-dependent experimental investigations clearly showed that high dielectric permittivity in the ferroelectrics enhanced flexoelectric polarization: essentially a linear relation was found to exist between μ12 and dielectric susceptibility χ at lower permittivity level (2100–2800), while μ12 versus χ curve started to deviate from the straight line at the χ∼2800 and nonlinear enhancement of μ12 with χ was observed, with μ12 value reaching 9.5 at χ∼11000. The nonlinearity in the flexoelectric effect was associated with domain-related processes. It is suggested that flexoelectric effect can have a significant impact on epitaxial ferroelectric thin films and mesoscopic structures.Mechanical strain gradient generated electric polarization or flexoelectric effect was investigated in unpoled lead zirconate titanate (PZT) ceramics in the ferroelectric state by using a cantilevered beam based approach. Flexoelectric coefficient μ12 at room temperature was measured to be 1.4μC∕m in the PZT ceramic at small level of strain gradient. Temperature-dependent experimental investigations clearly showed that high dielectric permittivity in the ferroelectrics enhanced flexoelectric polarization: essentially a linear relation was found to exist between μ12 and dielectric susceptibility χ at lower permittivity level (2100–2800), while μ12 versus χ curve started to deviate from the straight line at the χ∼2800 and nonlinear enhancement of μ12 with χ was observed, with μ12 value reaching 9.5 at χ∼11000. The nonlinearity in the flexoelectric effect was associated with domain-related processes. It is suggested that flexoelectric effect can have a significant impact on epitaxial ferroelectric thin films...