Analysis of Switching Circuits Through Incorporation of a Generalized Diode Reverse Recovery Model Into State Plane Analysis

A new switching circuit analysis technique is proposed in which the reverse recovery and junction capacitance non-idealities of diode-based switches are incorporated into a state plane analysis of the circuit. Accurate state plane modeling of the reverse recovery process is based on the development of new generalizations of the classic charge control model. Using as an example a zero-voltage switching dc transformer possessing high sensitivity to diode characteristics, these generalizations are shown to be necessary to achieve accurate results across all operating modes. The proposed circuit analysis technique produces excellent modeling agreement with results measured on a hardware prototype of the dc transformer circuit.

[1]  C. Q. Lee,et al.  State-plane analysis of high order parallel resonant converters , 1991, [1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems.

[2]  Jianping Ying,et al.  Prediction of PIN diode reverse recovery , 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).

[3]  Ivo Barbi,et al.  A ZVS PWM inverter with active voltage clamping using the reverse recovery energy of the diodes , 2005, IEEE Transactions on Circuits and Systems I: Regular Papers.

[4]  K. Shenai,et al.  Dynamics of reverse recovery of high-power P-i-N diodes , 1996 .

[5]  Yangguang Yan,et al.  A family of zero-voltage-switching DC-DC transformers , 2006, Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC '06..

[6]  King Jet Tseng,et al.  Modified charge-control equation for simulation of diode reverse recovery , 1996 .

[7]  Gang Ma,et al.  A Zero-Voltage-Switching Bidirectional DC–DC Converter With State Analysis and Soft-Switching-Oriented Design Consideration , 2009, IEEE Transactions on Industrial Electronics.

[8]  C. Q. Lee,et al.  Frequency response for the conventional parallel resonant converter based on the state-plane diagram , 1993 .

[9]  Bruno Allard,et al.  On the validity of the standard SPICE model of the diode for simulation in power electronics , 2001, IEEE Trans. Ind. Electron..

[10]  R.S. Chokhawala,et al.  A snubber design tool for p-n junction reverse recovery using a more accurate simulation of the reverse recovery waveform , 1989, Conference Record of the IEEE Industry Applications Society Annual Meeting,.

[11]  Amit Patra,et al.  Hybrid mode-switched control of DC-DC boost converter circuits , 2005, IEEE Transactions on Circuits and Systems II: Express Briefs.

[12]  C. Q. Lee,et al.  A novel approach to the analysis and design of the class-E DC-to-DC converter , 1990, IEEE International Symposium on Circuits and Systems.

[13]  Jinjun Liu,et al.  An improved method of parameter abstraction for a novel diode reverse recovery model in time-domain simulation , 2008, 2008 Twenty-Third Annual IEEE Applied Power Electronics Conference and Exposition.

[14]  Robert W. Erickson,et al.  Steady state analysis of the duty cycle controlled series resonant converter , 1987, IEEE Power Electronics Specialists Conference.

[15]  P. O. Lauritzen,et al.  A simple diode model with reverse recovery , 1991 .

[16]  C. Q. Lee,et al.  Theoretical and experimental studies of the LCC-type parallel resonant converter , 1990 .

[17]  H. Morel,et al.  State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: a novel approach , 1994 .

[18]  B. Bianco,et al.  Analytical solution for reverse recovery of power rectifiers , 1980, IEEE Transactions on Electron Devices.

[19]  D. C. Hamill,et al.  Analysis of the influence of diode reverse recovery on the operation and design of high-frequency rectifiers , 2000 .

[20]  Oded Abutbul,et al.  Step-up switching-mode converter with high voltage gain using a switched-capacitor circuit , 2003 .

[21]  Y. C. Kao,et al.  Correlations between reverse recovery time and lifetime of p-n junction driven by a current ramp , 1970 .

[22]  T. Wilson,et al.  Modeling and analysis of several classes of self-oscillating inverters: Part I- State-plane representations , 1982 .

[23]  Fung-Yuel Chang,et al.  Transient analysis of diode switching circuits including charge storage effect , 1996 .

[24]  P. Lauritzen,et al.  A simple power diode model with forward and reverse recovery , 1991 .

[25]  W.T. Beyene,et al.  Accurate diode forward and reverse recovery model using asymptotic waveform evaluation techniques , 1996, 1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96.

[26]  J. Lutz,et al.  Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in $\hbox{p}^{+}$-$\hbox{n}^{-}$ - $\hbox{n}^{+}$ Diodes , 2008, IEEE Transactions on Electron Devices.

[27]  Yung C. Liang,et al.  Diode forward and reverse recovery model for power electronic SPICE simulations , 1990 .

[28]  Esam H. Ismail,et al.  A Family of Single-Switch PWM Converters With High Step-Up Conversion Ratio , 2008, IEEE Transactions on Circuits and Systems I: Regular Papers.

[29]  Marian K. Kazimierczuk,et al.  State-plane analysis of zero-current-switching resonant DC/DC power converters , 1989 .

[30]  R.V. White,et al.  Emerging on-board power architectures , 2003, Eighteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2003. APEC '03..

[31]  Robert B. Darling,et al.  A full dynamic model for pn-junction diode switching transients , 1995 .