Pyramid-Shaped Silicon Photodetector With Subwavelength Aperture

We present a new type of silicon photodetector with a subwavelength aperture designed to scan material surfaces with a resolution inaccessible by conventional optical microscopy. Such a probe is designed for integration into a near-field scanning op- tical microscope (NSOM) for scanning and collecting information from the near-field region located at the vicinity of the surface. The photodetector, which was realized by conventional microelec- tronics technology, is located on top of a 250- m-high pyramid, enabling detection of reflected as well as transmitted light. The light sensitive part of the probe consists of a micromachined silicon structure built using anisotropic etch solutions such as ethylene di- amine pyrocatechol (EDP) and KOH. The shape of the probe is a truncated double pyramid with a ring shape top silicon/aluminum Schottky diode surrounding an exposed silicon photosensitive area of about 150 nm in diameter. Typical - characteristics and op- tical response measurements are presented.

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