Investigation on hot carrier reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor

Hot carrier (HC) reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor (GAA TSNWFET) is reported and discussed with respect to size and shape of nanowire channel, gate length, thickness and kind of gate dielectric in detail. Smaller nanowire channel size, shorter gate length and thinner gate oxide down to 2nm thickness show worse hot carrier reliability. The worst VD for 10 years guaranty, 1.31V, satisfies requirement of ITRS roadmap.

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