Direct selective metallization of AlN ceramics induced by laser radiation

Aluminum nitride (AlN) ceramics has a unique characteristic, namely the ability to form conductive structures on its surface directly by laser-induced decomposition of the base material. Various research has been carried out on obtaining low-ohmic structures depending on process parameters such as the laser power, overlap of subsequent pulses and the type of shielding gas (air, nitrogen and argon). This paper focuses on explaining which factors have the greatest impact on the resistance (resistivity) value of obtained structures. In order to explain the effect of the laser fluence (below and above the ablation threshold of aluminum nitride) on the chemical structure of the conductive layers, qualitative EDX analyses were performed. Optimization of the process allowed obtaining a resistivity of the conductive layers at a level of ρ = 0.64·10-6 Ω·m, with a thickness of aluminum up to 10 μm (sheet resistance RS = 10 mΩ/Sr). This technology can be useful in making printed circuit boards (PCB), various types of sensors as well as radio-frequency identification (RFID) and Lab-On-a-Chip (LOC) structures. This technology can also be useful for the production of metamaterials.

[1]  D. Cruz,et al.  Features of formation of channels during laser treatment of AlN ceramics , 2010 .

[2]  C. Lin,et al.  Oxidation behavior of AlN films at high temperature under controlled atmosphere , 2008 .

[3]  G. A. Slack,et al.  Growth of high purity AlN crystals , 1976 .

[4]  Minoru Obara,et al.  Selective ablation of AlN ceramic using femtosecond, nanosecond, and microsecond pulsed laser , 2001 .

[5]  Kozo Ishizaki,et al.  Sintering chemical reactions to increase thermal conductivity of aluminium nitride , 1991 .

[6]  P. Kabacik,et al.  Spiral resonator manufactured on AlN ceramics to filter the coupled wave between patch antennas , 2013 .

[7]  A. C. Dunham,et al.  Accuracy, precision and detection limits of energy‐dispersive electron‐microprobe analyses of silicates , 1978 .

[8]  Robert A. Youngman,et al.  Luminescence Studies of Oxygen‐Related Defects In Aluminum Nitride , 1990 .

[9]  A. V. Kostanovskii,et al.  Melting of aluminum nitride at atmospheric nitrogen pressure , 2000 .

[10]  Hongyu Zheng,et al.  Laser-induced conductivity in aluminum nitride , 1999, International Symposium on Photonics and Applications.

[11]  N. N. Nedialkov,et al.  Analysis of surface and material modifications caused by laser drilling of AlN ceramics , 2007 .

[12]  K. Etemadi,et al.  Formation of aluminum nitrides in thermal plasmas , 1991 .

[13]  B. J. Sealy,et al.  The thermal stability of AlN , 1986 .

[14]  Kamil Jankowski,et al.  Otrzymywanie polikryształów azotku glinu z dodatkiem tlenku itru , 2012 .

[15]  Constantin Grigoriu,et al.  Synthesis of Nanosized Aluminum Nitride Powders by Pulsed Laser Ablation , 2004 .

[16]  Yoshitaro Yoshida,et al.  Direct formation of conductor films by laser sublimating of ceramics. , 1989 .

[17]  Krzysztof M. Abramski,et al.  Conductive aluminum line formation on aluminum nitride surface by infrared nanosecond laser , 2013 .

[18]  W. Class,et al.  An aluminum nitride melting technique , 1968 .

[19]  Norbert Palka,et al.  Resonator structures on AlN ceramics surface treated by laser radiation , 2014, Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components.