“Negative capacitance” in resistor-ferroelectric and ferroelectric-dielectric networks: Apparent or intrinsic?

In this paper, we describe and analytically substantiate an alternate explanation for the negative capacitance (NC) effect in ferroelectrics (FE). We claim that the NC effect previously demonstrated in resistance-ferroelectric (R-FE) networks does not necessarily validate the existence of “S” shaped relation between polarization and voltage (according to Landau theory). In fact, the NC effect can be explained without invoking the “S”-shaped behavior of FE. We employ an analytical model for FE (Miller model) in which the steady state polarization strictly increases with the voltage across the FE and show that despite the inherent positive FE capacitance, reduction in FE voltage with the increase in its charge is possible in a R-FE network as well as in a ferroelectric-dielectric (FE-DE) stack. This can be attributed to a large increase in FE capacitance near the coercive voltage coupled with the polarization lag with respect to the electric field. Under certain conditions, these two factors yield transient NC effect. We analytically derive conditions for NC effect in R-FE and FE-DE networks. We couple our analysis with extensive simulations to explain the evolution of NC effect. We also compare the trends predicted by the aforementioned Miller model with Landau-Khalatnikov (L-K) model (static negative capacitance due to “S”-shape behaviour) and highlight the differences between the two approaches. First, with an increase in external resistance in the R-FE network, NC effect shows a non-monotonic behavior according to Miller model but increases according to L-K model. Second, with the increase in ramp-rate of applied voltage in the FE-DE stack, NC effect increases according to Miller model but decreases according to L-K model. These results unveil a possible way to experimentally validate the actual reason of NC effect in FE.

[1]  Jung-Hae Choi,et al.  Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors , 2016, Scientific Reports.

[2]  Xiaoqing Pan,et al.  Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures , 2011, 1103.4419.

[3]  Michael J. Hoffmann,et al.  Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 , 2016 .

[4]  W. J. Merz,et al.  Domain Formation and Domain Wall Motions in Ferroelectric BaTiO 3 Single Crystals , 1954 .

[5]  Paul M. Solomon,et al.  In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor , 2010, Proceedings of the IEEE.

[6]  Dmitri E. Nikonov,et al.  Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor , 2017, 1709.03255.

[7]  Arun V. Thathachary,et al.  A steep-slope transistor based on abrupt electronic phase transition , 2015, Nature Communications.

[8]  S. Datta,et al.  Use of negative capacitance to provide voltage amplification for low power nanoscale devices. , 2008, Nano letters.

[9]  Alexander Sutor,et al.  A Preisach-based hysteresis model for magnetic and ferroelectric hysteresis , 2010 .

[10]  A. F. Devonshire Theory of ferroelectrics , 1954 .

[11]  L. Landau,et al.  The Theory of Phase Transitions , 1936, Nature.

[12]  A. F. Devonshire XCVI. Theory of barium titanate , 1949 .

[13]  Hong Zhou,et al.  Steep-slope hysteresis-free negative capacitance MoS2 transistors , 2017, Nature Nanotechnology.

[14]  J. Eiras,et al.  Effect of temperature and frequency on dielectric and ferroelectric properties of PZT thin films , 2000 .

[15]  A. F. Devonshire CIX. Theory of barium titanate—Part II , 1951 .

[16]  Sayeef Salahuddin,et al.  Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure. , 2014, Nano letters.

[17]  L. You,et al.  Universal Ferroelectric Switching Dynamics of Vinylidene Fluoride-trifluoroethylene Copolymer Films , 2014, Scientific Reports.

[18]  Dirk Wouters,et al.  Preisach model for the simulation of ferroelectric capacitors , 2001 .

[19]  K. Lau,et al.  Dynamic hysteresis and scaling behaviours of lead-free 0.94Bi0.5Na0.5TiO3–0.06BaTiO3 bulk ceramics , 2016 .

[20]  Samuel Lee Miller,et al.  Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditions , 1991 .

[21]  L. You,et al.  Negative capacitance in a ferroelectric capacitor. , 2014, Nature materials.

[22]  P. Solomon,et al.  It’s Time to Reinvent the Transistor! , 2010, Science.

[23]  Adrian M. Ionescu,et al.  Tunnel field-effect transistors as energy-efficient electronic switches , 2011, Nature.