MOBILITY LIFETIME PRODUCT : A TOOL FOR CORRELATING A-SI:H FILM PROPERTIES AND SOLAR CELL PERFORMANCES
暂无分享,去创建一个
Ch. Hof | Nicolas Wyrsch | Arvind Shah | N. Beck | N. Wyrsch | Arvind Shah | C. Hof | N. Beck
[1] S. Elliott,et al. Deep trapping and recombination in hydrogenated amorphous silicon , 1994 .
[2] J. Kǒcka,et al. A-Si:H drift mobility - study of isotropy , 1989 .
[3] Yuanmin Li. Amorphous Silicon-Carbon Alloys for Solar Cells , 1993 .
[4] S. Nonomura,et al. Photothermal deflection spectroscopy of hydrogenated amorphous silicon at low energies and at low temperatures , 1994 .
[5] R. Street,et al. Effects of doping on transport and deep trapping in hydrogenated amorphous silicon , 1983 .
[6] S. Jones,et al. The effects of Ar and He dilution of silane plasmas on the microstructure of a-Si:H detected by small-angle X-ray scattering , 1993 .
[7] A. Shah,et al. Drift mobility and Staebler-Wronski effect in hydrogenated amorphous silicon , 1991 .
[8] Eli Zeldov,et al. Steady‐state photocarrier grating technique for diffusion‐length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi‐insulating GaAs , 1987 .
[9] M. Stutzmann,et al. Kinetics of light-induced defect creation in amorphous silicon: The constant degradation method , 1991 .
[10] R. Crandall. Chapter 8 Photoconductivity , 1984 .
[11] R. Collins,et al. Charged Defect State Distributions Obtained from the Analysis of Photoconductivities in Intrinsic a-Si:H Films , 1994 .
[12] Vaillant,et al. Recombination at dangling bonds and steady-state photoconductivity in a-Si:H. , 1986, Physical review. B, Condensed matter.
[13] R. Collins,et al. Photocarrier Transport and Recombination in Amorphous Silicon , 1993 .
[14] H. Curtins,et al. Influence of plasma excitation frequency fora-Si:H thin film deposition , 1987 .
[15] N. Wyrsch,et al. Role of dangling bond charge in determining μτ products for a-Si:H , 1993 .
[16] H. Okamoto,et al. Gap-states and their capture-cross-section distribution in a-Si:H studied by frequency-resolved photocurrent spectroscopy , 1991 .
[17] R. Street,et al. Hydrogenated amorphous silicon: Index , 1991 .
[18] A. Shah,et al. Deep defect determination by the constant photocurrent method (CPM) in annealed or light soaked amorphous hydrogenated silicon (a-Si:H) , 1994 .
[19] Subhendu Guha,et al. Stability Studies of Hydrogenated Amorphous Silicon Alloy Solar Cells Prepared with Hydrogen Dilution , 1994 .
[20] R. Street. Electronic Processes in Noncrystalline Materials , 1973 .
[21] A. Shah,et al. Depth profiles of mobility lifetime products and capture cross-sections in a-Si:H , 1991 .
[22] A. Shah,et al. Effects of dangling bonds on the recombination function in amorphous semiconductors , 1992 .
[23] I. Balberg,et al. Effect of Low-Level Boron Doping on Transport Properties of a-Si:H and a-SiGe:H Alloys , 1989 .