On the influence of strong magnetic field on MOS transistors

This paper presents a study on the influence of strong magnetic field on NMOS transistors' electrical characteristics. Experiments have been carried out in a small animal 7T MRI scanner, and have shown that up to 7T the influence exists but remains manageable. It is demonstrated that it depends on the transistor size, on the orientation of the chip inside the field, and on the gate-to-source voltage. A theoretical analysis in good agreement with experiments has been developed. Extrapolation to ultra-high field, i.e. above 10T, shows that at such a field the influence may be challenging, and that it can be lowered by using high overdrive voltage Vgs–Vth.

[1]  Franziska Hoffmann,et al.  Design Of Analog Cmos Integrated Circuits , 2016 .

[2]  M. Awipi,et al.  Effect of high magnetic field on transistor characteristics with applications to SEU testing , 1998, Proceedings IEEE Southeastcon '98 'Engineering for a New Era'.

[3]  William G. Moulton,et al.  The effect of high magnetic fields on junction field effect transistor device performance , 1998 .

[4]  A. Briguet,et al.  Investigation of NMR limits of detection for implantable microcoils , 2007, 2007 29th Annual International Conference of the IEEE Engineering in Medicine and Biology Society.

[5]  Ewald Moser,et al.  7‐T MR—from research to clinical applications? , 2012, NMR in biomedicine.

[6]  Jean-Baptiste Kammerer,et al.  Hall-effect magnetic tracking device for Magnetic Resonance Imaging , 2013, 2013 IEEE SENSORS.

[7]  Oliver Kraff,et al.  MRI at 7 tesla and above: Demonstrated and potential capabilities , 2015, Journal of magnetic resonance imaging : JMRI.

[8]  Maurits Ortmanns,et al.  A fully-integrated detector for NMR microscopy in 0.13μm CMOS , 2013, 2013 IEEE Asian Solid-State Circuits Conference (A-SSCC).

[9]  Josue Trejo Rosillo.  Contribution à l'amélioration de la sensibilité d'un micro-récepteur RMN implantable , 2014 .

[10]  Radivoje Popovic,et al.  Hall effect devices , 1991 .

[11]  Andreas Greiner,et al.  Subthreshold CMOS transistors are largely immune to magnetic field effects when operated above 11 T , 2015 .

[12]  Y. Tsividis.  Operation and modeling of the MOS transistor , 1987 .

[13]  Philippe Poure,et al.  Hall effect sensors integrated in standard technology and optimized with on-chip circuitry , 2006 .

[14]  W. J. Grubbs.  Hall effect devices , 1959 .

[15]  V. S. Lutsyak,et al.  Concentration dependence of the hall factor in n‐type silicon , 1974 .

[16]  D I Hoult,et al.  The signal-to-noise ratio of the nuclear magnetic resonance experiment. 1976. , 1976, Journal of magnetic resonance.