论文信息 - Room-Temperature Low-Dimensional Effects in Pi-Gate SOI MOSFETs

Room-Temperature Low-Dimensional Effects in Pi-Gate SOI MOSFETs

Evidence of a one-dimensional subband formation is found in Pi-gate SOI MOSFETs at room temperature as oscillations are found in the ID(VG) characteristics. These oscillations correspond to an intersubband scattering. Even though the height-to-width ratio of the silicon fins is equal to five, the device behavior is better described by a one-dimensional semiconductor theory than by a two-dimensional gas model

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