New Nb multi-layer fabrication process for large-scale SFQ circuits

Abstract We investigated the most suitable device structure for large-scale SFQ circuits and propose a new Nb 10-layer device structure that is composed of active layers including junctions at the top, PTL layers in the middle and DC power layers at the bottom. This device structure enables us to reduce the influence of the magnetic field due to large bias currents and to form a Nb/AlO x /Nb junction layer in the last part of the fabrication sequence. To achieve this structure, we developed a higher quality planarization that could remove the residual slight roughness after standard caldera planarization. We fabricated a diagnostic chip that is composed of test elements such as junctions, contacts, resistors and many kinds of process test patterns. We obtained sufficient characteristics for the diagnostic chips. Moreover, to evaluate the fabrication process, we designed and fabricated several shift registers. We confirmed the correct operation of an up to 2560-bit shift register having 10,281 junctions.