论文信息 - Impact of Polarity of Gate Bias and Hf Concentration on Breakdown of HfSiON/ $\hbox{SiO}_{2}$ Gate Dielectrics - 字舞流文

Impact of Polarity of Gate Bias and Hf Concentration on Breakdown of HfSiON/ $\hbox{SiO}_{2}$ Gate Dielectrics

Y. Tsunashima | M. Sato | K. Eguchi | I. Hirano | K. Sekine | T. Aoyama | T. Yamaguchi | T. Kobayashi