A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors (HBT's)

A complete method for parameter extraction from small-signal measurements of InP-based heterojunction bipolar transistors (HBT's) is presented. Employing analytically derived equations, a numerical solution is sought for the best fit between the model and the measured data. Through parasitics extraction and an optimization process, a realistic model for a self-aligned HBT technology is obtained. The results of the generated s-parameters from the model for a 2/spl times/10 /spl mu/m/sup 2/ emitter area device are presented over a frequency range of 250 MHz-36 GHz with excellent agreement to the measured data.

[1]  I. Getreu,et al.  Modeling the bipolar transistor , 1978 .

[2]  S. Chandrasekhar,et al.  20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications , 1995, IEEE Photonics Technology Letters.

[3]  B. Holzapfl,et al.  Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured S-parameters , 1995 .

[4]  A simplified model for the distributed base contact impedance in heterojunction bipolar transistors , 1992 .

[5]  Ce-Jun Wei,et al.  Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors , 1995 .

[6]  David L. Pulfrey,et al.  Reconciliation of methods for estimating f/sub max/ for microwave heterojunction transistors , 1991 .

[7]  X. Zhang,et al.  16-GHz bandwidth InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver , 1995, IEEE Photonics Technology Letters.

[8]  S. Chandrasekhar,et al.  Reduction of base-collector capacitance by undercutting the collector and subcollector in GaInAs/InP DHBTs , 1996, IEEE Electron Device Letters.

[9]  Dimitris Pavlidis,et al.  Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data , 1992 .

[10]  James S. Harris,et al.  Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit , 1991 .

[11]  P. R. Smith,et al.  Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit , 1995 .

[12]  D. Tait,et al.  Parameter-extraction method for heterojunction bipolar transistors , 1992, IEEE Microwave and Guided Wave Letters.

[13]  H. Cho,et al.  A three-step method for the de-embedding of high-frequency S-parameter measurements , 1991 .