Performance Evaluation of the Body-Diode of SiC Mosfets under Repetitive Surge Current Operation
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Thiago Batista Soeiro | Enea Bianda | Elena Mengotti | Gabriel Ortiz | E. Bianda | T. Soeiro | E. Mengotti | G. Ortiz
[1] Tsuyoshi Funaki,et al. A study on performance degradation of SiC MOSFET for burn-in test of body diode , 2013, 2013 4th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG).
[2] Francisco Canales,et al. Performance evaluation of custom-made 1.2-kV 100-A silicon carbide half-bridge module in three-phase grid connected PWM rectifier , 2015, 2015 IEEE Energy Conversion Congress and Exposition (ECCE).
[3] Ki-Bum Park,et al. High voltage photovoltaic system implementing Si/SiC-based active neutral-point-clamped converter , 2017, IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society.
[4] Johann W. Kolar,et al. Comparative Life Cycle Cost Analysis of Si and SiC PV Converter Systems Based on Advanced $\eta$- $\rho$-$\sigma$ Multiobjective Optimization Techniques , 2017, IEEE Transactions on Power Electronics.
[5] Yi Liu,et al. A 1200V/100A all-SiC power module for boost converter of EV/HEV's motor driver application , 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
[6] J. Casady,et al. Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs , 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.
[7] Pavol Bauer,et al. Three-phase Unidirectional Quasi-Single-Stage Delta-Switch Rectifier + DC-DC Buck Converter , 2019, IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society.
[8] T. Kimoto. Material science and device physics in SiC technology for high-voltage power devices , 2015 .
[9] Z. Shen,et al. Comparison Study of Surge Current Capability of Body Diode of SiC MOSFET and SiC Schottky Diode , 2018, 2018 IEEE Energy Conversion Congress and Exposition (ECCE).
[10] Ralph M. Burkart,et al. Application of 1.7-kV 700-A SiC LinPak to Optimize LCL Grid-Tied Converters , 2019, 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia).
[11] Operation of planar and trench SiC MOSFETs in a 10kW DC/DC-converter analyzing the impact of the body diode , 2017, 2017 IEEE Energy Conversion Congress and Exposition (ECCE).
[12] J. Lutz,et al. Surge Current Ruggedness of Silicon Carbide Schottky- and Merged-PiN-Schottky Diodes , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.
[13] T. Reimann,et al. "2nd Generation" SiC Schottky diodes: A new benchmark in SiC device ruggedness , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.
[14] K. J. Tseng,et al. Demonstration of a 50 kW and 100 kHz SiC high power density converter for aerospace application , 2016, 2016 IEEE Region 10 Conference (TENCON).
[15] Sei-Hyung Ryu,et al. A New Degradation Mechanism in High-Voltage SiC Power MOSFETs , 2007, IEEE Electron Device Letters.
[16] Thiago Batista Soeiro,et al. High Switches Utilization Single-Phase PWM Boost-Type PFC Rectifier Topologies Multiplying the Switching Frequency , 2014, IEEE Transactions on Power Electronics.
[17] J. Lutz,et al. Semiconductor Power Devices: Physics, Characteristics, Reliability , 2011 .
[18] Alberto Castellazzi,et al. Body diode reliability investigation of SiC power MOSFETs , 2016, Microelectron. Reliab..
[19] J. W. Kolar,et al. 99.3% Efficient three-phase buck-type all-SiC SWISS Rectifier for DC distribution systems , 2017, 2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
[20] Ty McNutt,et al. Switching performance comparison of 1200 V and 1700 V SiC optimized half bridge power modules with SiC antiparallel schottky diodes versus MOSFET intrinsic body diodes , 2017, 2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
[21] M. L. Heldwein,et al. Three-phase five-level bidirectional buck- + boosttype PFC converter for DC distribution systems , 2013, 2013 IEEE International Conference on Industrial Technology (ICIT).
[22] J. Lutz,et al. Repetitive surge current test of SiC MPS diode with load in bipolar regime , 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
[23] Blair R. Tuttle,et al. Silicon carbide: A unique platform for metal-oxide-semiconductor physics , 2015 .