论文信息 - Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance - 字舞流文

Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance

S. Denbaars | T. Palacios | N. Fichtenbaum | L. McCarthy | U. Mishra | S. Keller | L. Shen | Y. Pei | Likun Shen