Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
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S. Denbaars | T. Palacios | N. Fichtenbaum | L. McCarthy | U. Mishra | S. Keller | L. Shen | Y. Pei | Likun Shen
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S. Denbaars | T. Palacios | N. Fichtenbaum | L. McCarthy | U. Mishra | S. Keller | L. Shen | Y. Pei | Likun Shen