Application of SixNy:Hz (SiN) as index matching layer in a-Si:H thin film solar cells

The difference in refractive indices of glass substrate and transparent conducting oxide (TCO) electrode causes optical reflection in thin film solar cells, which results in lower absorption of light for devices. An anti-reflection layer between glass and TCO is required to reduce the loss of light due to optical reflection. Silicon nitride (SixNy:Hz) films have shown antireflection property. The refractive index of SixNy:Hz films can be engineered by changing the silicon or nitrogen content in the film. Here, we report the optimization of refractive index of SixNy:Hz to achieve a value between refractive index of glass (1.5) and TCO film (2.0). SixNy:Hz films have been deposited in a RF-plasma enhanced chemical vapour deposition system operating at a frequency of 13.56 MHz. The substrate temperature was fixed at 300 °C. Fourier transform infrared analysis has been used to determine the nature of Si-N, N-H, and Si-H bonding in the films. Refractive index of films has been measured using spectroscopic elli...

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