Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si
暂无分享,去创建一个
[1] T. Egawa,et al. 12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation , 2009 .
[2] B. Lu,et al. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology , 2010, IEEE Electron Device Letters.
[3] S. Decoutere,et al. A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si , 2011, IEEE Electron Device Letters.
[4] S. Lawrence Selvaraj,et al. Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon , 2009 .
[5] T. Egawa,et al. Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate , 2011 .
[6] T. Egawa,et al. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers , 2009, IEEE Electron Device Letters.
[7] Yoshihiro Sato,et al. GaN Power Transistors on Si Substrates for Switching Applications , 2010, Proceedings of the IEEE.