Design optimization of field-plate assisted RESURF devices
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[1] Bo Zhang,et al. A new structure and its analytical model for the electric field and breakdown voltage of SOI high voltage device with variable-k dielectric buried layer , 2007 .
[2] Benno Krabbenborg,et al. Advanced BCD technology for automotive, audio and power applications , 2007 .
[3] V. Dudek,et al. Analysis and optimization of the back-gate effect on lateral high-voltage SOI devices , 2005, IEEE Transactions on Electron Devices.
[4] S. K. Chung,et al. Breakdown voltage and on-resistance of multi-RESURF LDMOS , 2003, Microelectron. J..
[5] S. Merchant,et al. Analytical model for the electric field distribution in SOI RESURF and TMBS structures , 1999 .
[6] T. Fujihira. Theory of Semiconductor Superjunction Devices , 1997 .