论文信息 - Modeling of short geometry polycrystalline-silicon thin-film transistor

Modeling of short geometry polycrystalline-silicon thin-film transistor

An accurate model for the device characteristics of a short geometry polysilicon thin-film transistor (poly-Si TFT) is developed. The proposed channel length dependent threshold voltage and the current-voltage (I-V) characteristics determined are in excellent agreement with experimental results confirming the validity of this model. The impact of the grain size on device characteristics is also shown.

R. S. Gupta | R. Gupta | S. Chopra | S. Chopra

[1] Trond Ytterdal,et al. A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects , 1999 .

[2] Noriyoshi Yamauchi,et al. Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film , 1991 .

[3] Yasuhiro Mochizuki,et al. Inverse staggered poly-Si and amorphous Si double structure TFT's for LCD panels with peripheral driver circuits integration , 1996 .

[4] L. D. Yau,et al. A simple theory to predict the threshold voltage of short-channel IGFET's , 1974 .

[5] Jyh-Chyurn Guo,et al. A quasi-two-dimensional analytical model for the turn-on characteristics of polysilicon thin-film transistors , 1990 .

[6] J.M. Ford,et al. Characterization of the inverse-narrow-width effect , 1987, IEEE Transactions on Electron Devices.

[7] S. M. Sze,et al. Physics of semiconductor devices , 1969 .

[8] A. S. Grove,et al. Conductance of MOS transistors in saturation , 1968 .

[9] Michael S. Shur,et al. Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs , 1996 .

[10] S. D. Brotherton. Polycrystalline silicon thin film transistors , 1995 .

[11] M. Tadauchi,et al. 400 dpi integrated contact type linear image sensors with poly-Si TFT's analog readout circuits and dynamic shift registers , 1991 .

[12] N. Arora. MOSFET Models for VLSI Circuit Simulation , 1993 .