论文信息 - Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures - 字舞流文

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

K. Evans | D. Katzer | S. Binari | J. Roussos | R. Bass | D. Meyer | D. Storm | T. Paskova | T. Paskova | E. Preble | D. Deen | Tanja Paskova